摘要
本文使用导模(EFG)法生长了Ni掺杂β-Ga_(2)O_(3)单晶,并通过粉末X射线衍射(PXRD)和劳厄衍射(Laue diffraction)分别验证了其晶体结构和晶体质量。进一步通过紫外-可见-近红外透过光谱及红外透过光谱研究了Ni^(2+)掺杂对β-Ga_(2)O_(3)光学特性的影响,发现其(100)面的紫外截止边为252.9 nm,对应的光学带隙为4.74 eV。此外,阴极荧光(CL)光谱测试结果显示,Ni^(2+)掺杂β-Ga_(2)O_(3)单晶在600~800 nm具有宽带近红外发光特性,有望拓宽β-Ga_(2)O_(3)单晶材料在宽带近红外方面的应用。
Ni-dopedβ-Ga_(2)O_(3)single crystals were grown by edge-defined film-fed growth(EFG)method,and the crystal structure and quality were verified by powder X-ray diffraction(PXRD)and Laue diffraction.The effect of Ni^(2+)doping on optical properties of β-Ga_(2)O_(3) was investigated by UV-Vis-NIR transmission spectra and infrared transmission spectra.It is found that the ultraviolet cut-off edge of(100)plane is 252.9 nm and corresponding optical bandgap is 4.74 eV.Furthermore,the broadband near-infrared luminescent property of Ni-dopedβ-Ga_(2)O_(3)was discovered by cathodoluminescence(CL)spectroscopy in the range from 600 nm to 800 nm,which is expected to broaden the application ofβ-Ga_(2)O_(3)crystal in broadband near-infrared.
作者
陈绍华
穆文祥
张晋
董旭阳
李阳
贾志泰
陶绪堂
CHEN Shaohua;MU Wenxiang;ZHANG Jin;DONG Xuyang;LI Yang;JIA Zhitai;TAO Xutang(State Key Laboratory of Crystal Materials,Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;Shandong Research Institute of Industrial Technology,Jinan 250100,China)
出处
《人工晶体学报》
CAS
北大核心
2023年第8期1373-1377,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(52002219,51932004,61975098)
广东省重点领域研发计划(2020B010174002)
深圳市基础研究计划(JCYJ20210324132014038)
111工程2.0(BP2018013)。
关键词
氧化镓
宽禁带半导体
光电性能
宽带近红外发光
导模法
Ni掺杂
Ga 2O_(3)
wide-bandgap semiconductor
optical and electrical property
broadband near-infrared luminescent
EFG method
Ni doping
