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基于k·p方法的二类超晶格红外探测器仿真进展

Progress in simulation of type-Ⅱsuperlattice infrared detectors based on the k·p method
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摘要 二类超晶格(T2SL)相对于其它制冷型红外探测器材料体系,具有成本低、均匀性高、工艺兼容性好等特点,且波长灵活可调、俄歇复合速率低。k·p方法作为一种常用且相对成熟的能带结构仿真技术,具有计算精度高、节省计算资源等特点,在T2SL的仿真中受到了广泛的关注。梳理了中波、长波、甚长波T2SL红外探测器的仿真进展,归纳了k·p方法的发展过程,以及该方法在T2SL红外探测器仿真中的进展和作用,直观展示k·p方法在超晶格仿真工作中的准确性与便利性;重点讨论了T2SL探测器的暗电流机制、量子效率和吸收光谱等性质,对T2SL红外探测器的研究和应用前景进行展望。采用包络函数近似下的k·p方法可以对超晶格材料的能带结构和电子性质进行较为准确的理论分析和仿真计算。 Compared with other cooled infrared detector material systems,type-Ⅱsuperlattice(T2SL)has the characteristics of low cost,high uniformity,good process compatibility,flexible wavelength adjustability and lower Auger recombination rates.As a commonly used and relatively mature energy band structure simulation technology,the k·p method has the characteristics of high computational accuracy and saving computing resources,and has received widespread attention in the simulation of T2SL.The progress of simulation of mid-wave,long-wave,and very-long-wave T2SL infrared detectors was reviewed,and the development process of the k·p method was summarized,as well as the progress and role of the method in the simulation of T2SL infrared detectors,to more intuitively demonstrate the accuracy and convenience of the k·p method in superlattice simulation work.The dark current mechanisms,quantum efficiency,absorption spectra,and other properties of T2SL detectors were discussed with emphasis on the prospect of research and application of T2SL infrared detectors.The k·p method under the approximation of the envelope function can be used to perform accurate theoretical analysis and simulation calculations on the band structure and electronic properties of superlattice materials.
作者 孙童 关晓宁 张凡 宋海智 芦鹏飞 SUN Tong;GUAN Xiaoning;ZHANG Fan;SONG Haizhi;LU Pengfei(State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;SuperMat Technology(Beijing)Co.Ltd.,Beijing 100083,China;Southwest Institute of Technical Physics,Chengdu 610041,China;Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China)
出处 《激光技术》 CAS CSCD 北大核心 2023年第4期439-453,共15页 Laser Technology
基金 中国兵器工业集团激光器件技术重点实验室开放课题基金资助项目(KLLDT202103)。
关键词 探测器 二类超晶格 k·p方法 器件仿真 detectors type-Ⅱsuperlattices the k·p method device simulation
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  • 1祝耀昌.可靠性试验及其发展综述[J].航天器环境工程,2007,24(5):261-269. 被引量:30
  • 2祝耀昌,王宇宏.高加速应力试验及其与传统试验的比较[J].装备环境工程,2006,3(4):16-19. 被引量:6
  • 3G J Brown,F Szmulowicz,K Mahalingam,et al.Recent Advances in InAs/GaSb Superlattices for Very Long Wavelength Infrared Deteetion[C] //SPIE,2003,4999:457-466.
  • 4K A Anselm,H Ren,M Viela,et al.Long-wavelength infrared InAs/InGaSb type-Ⅱ superlattice photovoltaic detectors[C] //SPIE,2001.4288:183-190.
  • 5C-H Lin,A Anselm,C-H.Kuo,et al.Type-Ⅱ InAs/InGaSb SL photodetectors[C] //SPIE,2000,3948:133-144.
  • 6E H Aifer,E M Jackson,G Boishin,et al.Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff[J].Applied Physics Letters,2003,82(25):4411-4413.
  • 7F Szmulowicz,H Haugan,G J Brown.Effect of inter faces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-func-tion approximation[J].Physical Review B,2004,69(15):155321(17页).
  • 8W H Lau,M E Flatté.Effect of interface structure on the optical properties of InAs/GaSb laser active regions[J].Applied Physics Letters,2002,80(10):1683-1685.
  • 9Y Wei,M Razeghi.Modeling of type-Ⅱ InAs/GaSb superlattices using an empirical tight-binding method and interface engineering[J].Physical Review B,2004,69(8):085316(7页).
  • 10Y Wei,M Razeghi,G J Brown,et al.Modeling type-Ⅱ InAs/GaSb superlattices using empirical tight-binding method:new aspects[C] //SPIE,2004,5359:301-308.

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