摘要
采用能量为14 MeV的中子对增强型AlGaN/GaN高电子迁移率晶体管器件进行了最高注量为3×10^(14)n/cm^(2)的位移损伤辐照实验。实验结果表明:当中子注量不大于3×10^(14)n/cm^(2)时,器件转移特性曲线向左发生不同程度漂移,曲线斜率增大,阈值电压轻微变化,栅特性不受辐照注量影响,而跨导峰值和关态泄露电流有所改善。此外,不同注量的中子辐照后,器件的饱和漏极电流呈现出下降趋势,且中子注量越大,漏极电流退化越明显。结果分析可知,中子辐照产生的新型位移缺陷影响了沟道二维电子气的迁移率和极化电荷密度,从而导致器件电学特性改变。与此同时,室温退火过程中发现器件特性有部分恢复,归因于辐照产生的缺陷在常温下不太稳定,与其他间隙原子发生复合,缺陷得以消除。
An enhanced AlGaN/GaN high electron mobility transistor(HEMT)was irradiated with a maximum fluence volume of 3×10^(14) n/cm^(2) using neutrons with an energy of 14 MeV.The experimental results show that when the neutron fluence is less than 3×10^(14) n/cm^(2),the device transfer characteristic curve will drift to the left in different degrees,the curve slope increases,the threshold voltage changes slightly,the gate characteristics are not affected by the irradiation fluence,and the peak transconductance and off‑state leakage current of the device are improved.In addition,the saturated drain current of the device shows a downward trend after irradiation with different neutron fluences,and the larger the neutron irradiation fluence,the more obvious the drain current degradation.The results show that the mobility of two dimensional electron gas(2DEG)in the channel and polarization charge density are affected by the new displacement defect caused by neutron irradiation,which results in the change of the electrical characteristics of the device.At the same time,during the annealing process at room temperature,it was found that the characteristics of the device were partially recovered,because the defects generated by irradiation were unstable at room temperature and recombined with other gap atoms,so the defects could be eliminated.
作者
邱一武
马艺珂
张平威
殷亚楠
周昕杰
QIU Yiwu;MA Yike;ZHANG Pingwei;YIN Yanan;ZHOU Xinjie(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi,J iangsu,214035,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第4期359-365,374,共8页
Research & Progress of SSE
