摘要
基于专利合作数据,构建中国光刻机技术创新网络,运用社会网络分析法对当前中国光刻机技术创新网络的静态、动态结构特征进行分析;构建动态知识流动仿真模型,对不同优化策略进行比较。结果表明:中国光刻机技术创新网络规模呈明显扩大趋势,逐步呈现以上海微电子等研发单位为核心节点的“核心-边缘”结构,产学研合作以“产-学”模式为主;光刻胶、光刻气体等配套设施研发机构处于网络边缘,与技术链上下游节点技术交流水平有限;新加入网络节点对网络知识水平提升的贡献较小,与网络合作紧密程度不高;研发方向优化、产学研合作模式优化、节点进退出机制优化三种优化策略均对网络知识水平提升具有显著调节作用,对中国光刻机技术创新网络均衡性及发展潜力的提升有着重要意义。
Based on the patent cooperation data,a Chinese lithography technology innovation network(CLT-IN)was constructed,and the social network analysis method was applied to analyze the static and dynamic structural characteristics of the current CLT-IN.Furthermore,a dynamic knowledge flow simulation model was constructed to compare different optimization strategies.The results show that CLT-IN has a clear trend of expansion and gradually presents a“core-edge”structure with research and development(R&D)units such as Shanghai Microelectronics as the core node.The Industry-University-Research(I-U-R)cooperation is mainly based on the“Industry-University”cooperative pattern.The R&D institutions of supporting facilities,such as photoresist and lithography gas are at the edge of the network and have limited technical communication with the upstream and downstream nodes of the technology chain.The initiate nodes have little contribution to the improvement of network knowledge level,and do not cooperate closely with the network.The three optimization strategies of R&D direction optimization,I-U-R cooperation mode optimization,and node entry/exit mechanism optimization have significant moderating effects on the improvement of network knowledge level,which are important for the improvement of the balance and development potential of CLT-IN.
作者
顾浩然
郭本海
龙卓茜
乐为
GU Haoran;GUO Benhai;LONG Zhuoxi;LE Wei(School of Economics and Management,China Jiliang University,Hangzhou Zhejiang 310018,China)
出处
《工业工程与管理》
CSCD
北大核心
2023年第4期17-27,共11页
Industrial Engineering and Management
基金
国家自然科学基金资助项目(72074200,71972172)。
关键词
光刻机
专利合作网络
知识流动模型
优化策略
lithography
patent cooperation network
knowledge flow model
optimization strategy
