摘要
纳米硅阵列材料由于其与体硅材料所不同的新颖的物理性质,在硅基探测器件与太阳能电池等光电器件中有着潜在的应用前景。本文通过制备硅基纳米阵列结构来对光进行高效吸收,对改善器件的抗反射性能有着明显的影响。本研究利用时域有限差分法在红外波段(1000~2000 nm)设计了具有陷光结构的硅纳米锥阵列结构,对具有不同形状和结构的周期性硅阵列纳米锥结构进行了光学性质的仿真研究,探究了不同结构参数对于射入光线的反射性能的影响,对仿真结果进行了分析。在设计的最优化结构下,最低的反射率和无结构的体硅相比从31%降低到1.5%。
Because of its novel physical properties which are different from bulk silicon,nano-silicon array materials have a potential application prospect in silicon-based detectors,solar cells and other photoelectric devices.In this paper,the silicon nanoarray structure is prepared to absorb light efficiently,which has an obvious influence on improving the anti-reflection performance of the device.In this study,the finite-difference time-domain method was used to design a silicon nanocone array structure with light trapping structure in infrared band(1000~2000 nm).The optical properties of periodic silicon array nanocone structures with different shapes and structures were simulated.The influence of different structural parameters on the reflection performance of incoming light was explored,and the simulation results were analyzed.Under the optimal design structure,the lowest reflectance is reduced from 31%to 1.5%compared with unstructured bulk silicon.
作者
王颖
罗宇浏
WANG Ying;LUO Yuliu(Shaanxi Xueqian Normal University,Xi’an,Shaanxi 710061,China;School of Microelectronics,Xidian University,Xi’an,Shaanxi 710071,China)
出处
《信息记录材料》
2023年第9期20-22,26,共4页
Information Recording Materials
关键词
硅
纳米结构
抗反射性能
Silicon
Nanostructure
Anti-reflection performance
