摘要
为了研究低能N^(+)注入诱导金黄色葡萄球菌对其进化的影响,通过低能N^(+)注入诱变获得耐药突变株,利用基因组De novo测序分析其16S rRNA基因的突变与耐药性变化,探索低能N^(+)注入驱动金黄色葡萄球菌16S rRNA遗传进化与耐药进化的机制。结果共获得158株耐药的金黄色葡萄球菌,其中11株诱变耐药菌的16SrRNA基因序列分别出现片段缺失,GC%从51.23%改变为50.91%~53.12%,V 1,V 2,V 3和V 6区发生多个点突变,并出现对诺氟沙星、万古霉素、庆大霉素的不同耐药特征。研究证明低能N^(+)注入可以引发金黄色葡萄球菌16S rRNA基因的随机突变及其耐药进化,为分析低能N^(+)离子注入加速16S rRNA变异和耐药基因从头起源提供新的遗传证据。
The study aims to probe the influence of low energy N^(+)ion implantation on the evolution of Staphylococcus aureus.A total of 158 drug resistant Staphylococcus aureus strains were obtained by low energy N^(+)implantation.The mutation and drug resistance changes of the 16S rRNA in recombinant strains of Staphylococcus aureus were analyzed with de novo sequencing to explore their mechanism of genetic evolution and drug resistance evolution.And 16S rRNA gene sequence of 11 induced drug resistant S.aureus exhibited fragment deletion.CG%changed from 51.23%to 50.91%~53.12%,and multiple point mutations occurred in the V 1,V 2,V 3,and V 6 regions.They were resistant to norfloxacin,vancomycin and gentamicin to different degrees.The results demonstrated that low energy N^(+)implantation can induce random mutations in the Staphylococcus aureus 16S rRNA gene and drive its drug resistance evolution.The study provides new genetic evidence for the accelerated variation of the 16S rRNA gene and the origin of drug resistant genes through low energy N^(+)implantation.
作者
唐朝
王婷
王雪瑞
陈明晖
蔡长龙
TANG Chao;WANG Ting;WANG Xuerui;CHEN Minghui;CAI Changlong(School of Opto Electronical Engineering,Xi’an Technological University,Xi’an 710021,China;School of Biological and Pharmaceutical Sciences,Shaanxi University of Science and Technology,Xi’an 710021,China;China North Vehicle Research Institute,Beijing 100072,China)
出处
《西安工业大学学报》
CAS
2023年第5期470-477,共8页
Journal of Xi’an Technological University
基金
国家自然科学基金项目(11975177)。
