摘要
立方氮化硼(cBN)作为超宽禁带半导体材料,由于具有一系列优异的物理化学性质而受到广泛关注。文章采用射频磁控溅射方法通过优化工艺参数成功地在单晶硅衬底上制备了cBN薄膜。在工作气体为氮氩混合气体、功率120 W、生长温度为600℃的条件下,在90~150 V的负偏压范围内制备的薄膜都是致密的,并且随着负偏压的增强,薄膜的沉积速率降低,立方相含量增加。所制备的cBN薄膜随着立方相含量增加,其光学禁带宽度也明显增大。当立方相体积分数为50%时,cBN薄膜的光学禁带可达到5.83 eV。这为cBN薄膜作为极端电子学材料在大功率半导体和光电子器件等领域的应用奠定了基础。
Cubic boron nitride(cBN),as the ultra-wide band gap semiconductor materials,has attracted wide attention due to a series of excellent physical and chemical properties.In this paper,cBN thin films were successfully prepared on monocrystalline silicon substrate by optimizing the process parameters via RF magnetron sputtering method.When the working gas is nitrogen/argon mixture,the power is 120 W,and the growth temperature is 600℃,the films prepared in the negative bias range of 90-150 V are dense,and with the increase of negative bias,the deposition rate of the films decreases,and the content of cubic phase increases.The optical band gap of cBN films increases with the increase of cubic phase content.When the cubic phase content is 50%,the optical band gap of cBN films can reach 5.83 eV.This lays a foundation for the application of cBN thin films as extreme electronics materials in high power semiconductor and optoelectronic devices.
作者
刘彩云
殷红
LIU Caiyun;YIN Hong(State Key Lab of Superhard Materials,College of Physics,Jilin University,Changchun,130012,China)
出处
《超硬材料工程》
CAS
2023年第5期16-20,共5页
Superhard Material Engineering
基金
国家自然科学基金(No.51872113,No.51572105)。
关键词
立方氮化硼薄膜
微观结构
分子振动
光学性质
cubic boron nitride
microstructure
molecular vibration
optical properties
