摘要
针对传统肖特基势垒二极管基倍频器输出功率低的问题,提出了一种AlN基板散热增强式GaN二倍频器。倍频器采用AlN基板代替传统石英基板,结合具有高耐压特性的GaN肖特基势垒二极管,大幅提升了倍频器的散热特性及耐受功率。热仿真结果显示倍频器中芯片结温温升下降了约31%,耐受功率达到1 W以上。制作了二倍频器样品并对其输出功率、转换效率进行测试。测试结果表明,输入连续波功率为300 mW时,该二倍频器在204~218 GHz频带内的转换效率均大于10%,具有较大的工作带宽。在210 GHz工作频率下,将输入功率增加至900 mW,二倍频器依然能够稳定工作,实现了87 mW的输出功率和9.7%的转换效率。
Aiming at the problem of low output power of conventional Schottky barrier diode-based frequency multiplier,a GaN frequency doubler with aluminum nitride(AlN) substrate for heat dissipation enhancement was proposed.The heat dissipation characteristic and tolerance power of the frequency doubler are greatly improved by using GaN Schottky barrier diode with high breakdown voltage and AlN substrate instead of the conventional quartz glass substrate.The thermal simulation results show that the chip junction temperature rise in the frequency doubler can be reduced by about 31% and the frequency doubler can withstand input power of more than 1 W.A frequency doubler sample was fabricated,and its output power and conversion efficiency were measured.The measurement results indicate that when the input continuous wave power is 300 mW,the frequency doubler shows a wide operating bandwidth with a conversion efficiency greater than 10% at 204-218 GHz.At an operating frequency of 210 GHz,when the input power is increased to 900 mW,the frequency doubler can still work stably,achieving an output power of 87 mW and a conversion efficiency of 9.7%.
作者
宋洁晶
高渊
Song Jiejing;Gao Yuan(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2023年第9期800-804,共5页
Semiconductor Technology
