摘要
随着集成电路中工艺尺寸的不断缩减,锁存器也越来越容易受到粒子辐射引起的三节点翻转的影响。针对该问题,基于C单元的结构,提出一种低功耗、低延时和高鲁棒性的三节点翻转并自恢复的MKEEP锁存器。通过仿真实验和PVT的波动实验表明,相对于其他拥有三节点容忍或自恢复能力的锁存器,该锁存器拥有低功耗、低延迟和更小的面积开销,且对工艺、电压和温度的敏感度较低,优势明显。
With the persistent reduction of process size in integrated circuits,latches are also more and more vulnerable to the influence of triple-node-upset caused by particles radiation.Aiming at this problem,a triple-node-upset tolerance and self-recovery MKEEP latch based on C-element with low power consumption,low delay and high robustness is proposed.Simulation experiments and PVT fluctuation experiments show that,compared with other latches with triple-node-upset tolerance or self-recovery capability,the proposed latch has lower power consumption,low delay and area overhead.At the same time,this latch is less sensitive to process,voltage and temperature,and has obvious advan-tages than referenced latches.
作者
徐辉
朱烁
孙皓洁
马瑞君
梁华国
黄正峰
XU Hui;ZHU Shuo;SUN Hao-jie;MA Rui-jun;LIANG Hua-guo;HUANG Zheng-feng(School of Computer Science and Engineering,Anhui University of Science and Technology,Huainan 232001;School of Microelectronics,Hefei University of Technology,Hefei 230009,China)
出处
《计算机工程与科学》
CSCD
北大核心
2024年第1期37-45,共9页
Computer Engineering & Science
基金
国家自然科学基金(61834006,61874156,61404001)
国家重大科研仪器研制项目(62027815)。
关键词
粒子辐射
三节点翻转
锁存器
自恢复
particles radiation
triple-node-upset
latch
self-recovery
