摘要
忆阻器和突触器件作为一种有潜力的神经形态器件,近年来得到了广泛的研究。二维过渡金属硫族化合物(2D TMC)由于其独特的性能,使基于其的电子器件制造工艺具有高集成度、高兼容性和高扩展性等优势。对基于2D TMC的高性能忆阻器在神经形态计算中的应用进行了全面的综述。首先介绍了2D TMC及其异质结在忆阻器中的应用潜力,然后基于该类材料的基本结构和物理性能,对近年来报道的器件进行了分类介绍,接着讨论了这些新兴材料和器件在神经形态计算中的应用,最后基于目前存在的问题,提出了解决方案,并对该类器件在其他场景的应用进行了展望。
As a promising neuromorphic device,memristors and synaptic devices have been exten-sively studied in recent years.Two-dimensional transition metal chalcogenides(2D TMCs)offer the ad-vantages of high integration,compatibility and scalability for electronic device manufacturing processes based on them due to their unique properties.The application of high-performance memristors based on 2D TMCs in neuromorphic computing is reviewed comprehensively.Firstly,the application potential of 2D TMCs and their heterojunctions in memristors are discussed.Secondly,various devices reported in recent years are classified and introduced according to their basic structures and physical properties.Then,the applications of these emerging materials and devices in neuromorphic computing are discussed.Finally,a solution is proposed to address current issues,and the application of this type of device in other scenarios is prospected.
作者
毛成烈
高小玉
南海燕
Mao Chenglie;Gao Xiaoyu;Nan Haiyan(Wuxi Lixin Microelectronics Co.,Ltd,Wuci 214028,China;School of loT Engineering,Jiangnan University,Wuxi 214122,China)
出处
《半导体技术》
北大核心
2024年第2期109-122,共14页
Semiconductor Technology
基金
长三角科技创新共同体联合攻关项目(2022CSJGG0400)。
