摘要
In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.
基金
This work was supported by the National Key R&D Program of China(2022YFB3605104)
National Natural Science Foundation of China(62250038,61904172,61974162,62034008,62074142,and 62074140)
Strategic Priority Research Program of Chinese Academy of Sciences(XDB43030101)
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD016).
