摘要
为了提高大面积集成门极换流晶闸管(IGCT)的最大可关断电流处理能力,以直径为91 mm的4.5 kV大面积IGCT为研究对象,针对其在研发过程中频繁出现的距离门极接触较远的外环失效现象,首先建立大面积IGCT芯片的仿真结构模型,然后给器件施加相应的关断应力,对器件的关断特性进行仿真分析。结果表明,距离门极接触较远的阴极环单元接收到的关断信号存在延迟,造成器件换流期间的内、外环部分电流分布不均匀,而动态雪崩效应的发生会加剧这种电流向外环的聚集效应,直至雪崩诱发的电流丝产生后,造成外环的阴极单元被重触发,最终导致器件因局部温升过高而失效。采用径向载流子寿命控制可抑制大面积IGCT因信号延迟造成的电流不均匀分布效应,提高器件的最大可关断电流能力。
In order to improve the maximum controllable current of the large⁃area integrated gate commutated thyristor(IGCT),4.5 kV large⁃area IGCT with a diameter of 91 mm was studied.In re⁃sponse to the failure phenomenon frequently occurred at the cathode units far from the gate contact of IGCT during the research and development process,a simulation structural model of the large⁃area IGCT chip was established.The corresponding turn⁃off stress was applied to the device,and the fail⁃ure phenomenon was simulated and analyzed.The results show that due to a turn⁃off signal delay at the cathode unit far from the gate contact,the inhomogeneous current distribution between the inner and outer rings occurs during the device commutation,and this effect is intensified when dynamic ava⁃lanche effect occurs.Until the avalanche⁃induced current filament is generated,the cathode unit in the outer ring will be re⁃triggered,leading to device destruction due to local over⁃heating.The use of radi⁃al carrier lifetime control can suppress the inhomogeneous current distribution effect caused by signal delay in large⁃area IGCT,and improve the maximum turn⁃off current capability of the device.
作者
姚德贵
董曼玲
宋伟
张嘉涛
鲁一苇
肖超
杨武华
YAO Degui;DONG Manling;SONG Wei;ZHANG Jiatao;LU Yiwei;XIAO Chao;YANG Wuhua(State Grid Henan Electric Power Research Institute,Zhengzhou,450052,CHN;State Grid Henan Electric Power Company,Zhengzhou,450018,CHN;Xi'an University of Technology,Xi'an,710048,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第6期514-518,551,共6页
Research & Progress of SSE
关键词
集成门极换流晶闸管
动态雪崩
电流丝
寿命控制
integrated gate commutated thyristor(IGCT)
dynamic avalanche
current fil⁃ament
lifetime control
