摘要
针对碳化硅(SiC)基片在抛光过程中效率低、费用高、环境污染大等问题,提出了一种在干式状态下对SiC基片进行摩擦化学机械抛光的方法(dry tribochemical mechanical polishing,DTCMP)。探究不同工艺参数(磨料种类、磨粒粒径、磨粒含量、抛光盘转速、抛光载荷、固相氧化剂含量)对单晶SiC基片抛光效率和表面质量的影响规律。研究结果表明:金刚石磨粒更适合SiC的摩擦化学机械抛光;当磨粒粒径为W1,磨粒质量为4 g,抛光盘转速为70r/min,抛光载荷为20.685 k Pa,固相氧化剂过碳酸钠添加量为10g时,其为最优工艺参数。采用最优工艺参数对表面粗糙度约为20nm的单晶6H-SiC基片进行干式抛光加工,最终获得表面粗糙度R_(a)为3.214 nm。DTCMP方法抛光SiC基片比水基抛光法热量损失少,所产生的界面温度更高,反应所需的活化能更低,可以实现SiC基片的绿色、高效和高质量抛光。
Aiming at the issues of low efficiency,high cost,and environmental pollution associated with silicon carbide(SiC)substrates in the polishing process,a method of tribochemical mechanical polishing of SiC substrates in the dry state(Dry Tribochemical Mechanical Polishing,DTCMP)is proposed.The effect of different process parameters(abrasive type,abrasive size,abrasive content,polishing plate speed,polishing load,solid phase oxidant content)on the polishing efficiency and surface quality of single-crystal silicon carbide substrates was investigated.The results show that diamond abrasive is more suitable for the tribochemical mechanical polishing of silicon carbide.Optimal test parameters are achieved when the abrasive size is W1,the abrasive content is 4 g,the polishing plate speed is 70 r/min,the polishing load is 20.685 kPa,and the solid phase oxidant sodium percarbonate is added at 10 g.Single-crystal 6H-SiC substrates with a surface roughness of approximately 20 nm were polished using the optimal process parameters,finanlly resulting in a surface roughness of R_(a) of 3.214 nm.The DTCMP method for polishing SiC substrate has less heat loss than water-based polishing method,enabling higher interface temperature and lower activation energy required for reactions.This method can realize green,efficient and high-quality polishing of SiC substrates.
作者
薛明普
肖文
李宗唐
王占奎
苏建修
XUE Mingpu;XIAO Wen;LI Zongtang;WANG Zhankui;SU Jianxiu(School of Mechanical and Electrical Engineering,Henan Institute of Science and Technology,Xinxiang 453003,Henan,China)
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2024年第1期101-108,共8页
Diamond & Abrasives Engineering
关键词
SiC基片
干式摩擦化学机械抛光
材料去除率
表面粗糙度
SiC substrate
dry tribochemical mechanical polishing
material removal rate
surface roughness
