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一种S波段超宽带能量选择表面设计

Design of an S-band ultra-wideband energy selective surface
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摘要 设计了一种工作在S波段的能量选择表面,可实现超宽带自适应强电磁防护。该结构由两层金属周期结构组成,顶层为两个对称分布的金属条和一个金属片,金属条与金属片间加载两个PIN二极管;底层为十字架结构。当入射电磁波场强低于阈值时,能量选择表面工作在透波状态,电磁波可以传播;当入射电磁波场强超过阈值时,金属条和金属片之间产生的感应电压使得PIN二极管导通,此时能量选择表面进入防护状态,电磁波被屏蔽。通过对能量选择表面在PIN二极管导通和截止状态下的表面电流和电场分布以及等效电路模型进行分析,解释了该结构的工作原理。采用PCB制作工艺加工了实物样板并对弱场入射下的插入损耗以及强场入射下的防护效能进行测试。实验和仿真结果匹配性良好,表明该能量选择表面在透波状态下的工作中心频率为2.7 GHz,插入损耗小于1 dB的工作频带为2.2~3.5 GHz;在防护状态下,工作频带的防护效能大于10 dB,达到了超宽带的要求。 In this paper,an energy selective surface(ESS)structure working in S-band is designed,which can realize ultra-wideband adaptive strong electromagnetic(EM)protection.The ESS is composed of top and bottom layers.The top layer includes two parallel strips and a patch,on which two PIN diodes are loaded,and the bottom layer includes two vertical stripes.When the incident EM intensity is lower than the threshold value,the ESS works in the transparent state,which makes the electromagnetic waves propagate;When the EM intensity exceeds the threshold value,the induced voltage generated between the metal strips and patch makes the PIN diode turn on,and the ESS enters the protective state and the electromagnetic wave is shielded.The working principle of the ESS is analyzed by simulating the surface current and electric field distribution in PIN diode on-off state and equivalent circuit model.The prototype was processed by PCB process and the insertion loss of weak field incident and shielding efficiency of strong field incident were measured.The experimental and simulation results are in great agreement.The results show that in the transparent state,the operating center frequency of the ESS is 2.7 GHz,and the operating band with insertion loss less than 1 dB is 2.2-3.5 GHz.In the protective state,the shielding efficiency of the operating band is greater than 10 dB,which meets the requirement of ultra-wideband.
作者 周涛 虎宁 盖龙杰 黄文涛 徐延林 刘培国 Zhou Tao;Hu Ning;Gai Longjie;Huang Wentao;Xu Yanlin;Liu Peiguo(College of Electronic Science and Technology,National University of Defense Technology,Changsha 410073,China;Information Engineering University,Zhengzhou 450001,China)
出处 《强激光与粒子束》 CAS CSCD 北大核心 2024年第3期13-18,共6页 High Power Laser and Particle Beams
基金 国家自然科学基金重大项目(62293491) 湖南省自然科学基金项目(2022JJ20045)。
关键词 能量选择表面 强电磁防护 S波段 超宽带 自适应响应 PIN二极管 energy selective surface strong electromagnetic protection ultra-wideband S-band adaptive respondse PIN diode
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