摘要
H型栅NMOS器件因其强抗辐照和低功耗等优势已逐渐成为PDSOI电路设计中的核心器件。但H型栅NMOS器件的Ids-Vds曲线会在漏极电压较高时发生明显的翘曲现象,称为Kink效应。该效应严重影响一定工作条件下的电路性能和稳定性。为此,依据实测和TCAD仿真数据,分析了H型栅NMOS器件发生Kink效应的机理,并且基于0.15μm SOI工艺,进一步量化分析了顶层硅膜厚度、阱浓度、栅尺寸、温度以及总剂量辐照等方面对Kink效应的影响。最终结果表明,高漏极电压下NMOS器件体区积累大量空穴导致寄生NPN三极管开启,从而引发了Kink效应。本工作完善了H型栅NMOS器件Kink效应的研究,为PDSOI电路设计中抑制Kink效应提供了有益的参考。
Due to its strong anti-irradiation and low power consumption,H-gate NMOS devices have become the fundamental device for partially-depleted silicon-on-insulator(PD-SOI)circuit design.However,the kink effect,manifested by obvious wraps of Ids-Vds curves at high drain voltage,will significantly affect the circuit properties and stabilities under certain conditions.Here,the mechanism of the Kink effect was analyzed for the H-gate NMOS devices using measured data and the TCAD software simulated data.Based on the 0.15μm SOI process,quantitative analysis was performed on the Kink effect to understand the effects of the top silicon film thickness,trap concentration,gate size,temperature and total ionizing dose irradiation.The final results show that at high drain voltage high concentration holes will accumulate in the body of the NMOS devices,which leads to establishment of parasitic NPN triode and triggers the Kink effect.This work throws light on the Kink effect in the H-gate NMOS devices and suggests solution for suppressing the Kink effect in the PD-SOI circuit design.
作者
徐大为
彭宏伟
秦鹏啸
王青松
董海南
XU Dawei;PENG Hongwei;QIN Pengxiao;WANG Qingsong;DONG Hainan(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035,Jiangsu Province,China)
出处
《电子元件与材料》
CAS
北大核心
2024年第1期55-60,共6页
Electronic Components And Materials
