摘要
IGBT开关瞬态电流变化过程包括开通电流上升过程和关断电流下降过程,由于功率器件的非线性特征及其与电路参数的紧密耦合,造成瞬态过程电磁现象复杂。重点研究了瞬态过程电压电流参数的耦合规律,分析了耦合关系对IGBT工作特性的影响。首先,分析了IGBT内寄生PIN结构、集射极电压对栅极控制模型的影响。其次,基于栅极控制模型的分析,提出集电极电流的拟合次数应考虑电流变化过程持续时间及计算场景,二次及以下多项式拟合可近似描述集电极电流波形并开展功率损耗分析,但不适于电流变化率和感应电压分析。再次,比较了开通和关断过程计算所得回路寄生电感值的差异,提出了不同过程计算回路寄生电感的适用范围及FWD封装寄生电感的计算方法。最后,分析了瞬态过程栅极电压和集射极电压的耦合关系,提出了通过栅极电压估计集射极电压的状态监测方法并进行了实验验证。
The transient current variation process of IGBT during switching includes the current rising process and the current dropping process.Due to the nonlinear characteristics of power devices and their close coupling with circuit pa-rameters,the electromagnetic phenomena during the transient process are complex.The coupling law of voltage and current parameters in transient process is emphatically studied,and the influence of the coupling relationship on the oper-ating characteristics of IGBT is analyzed.Firstly,the influence of parasitic PIN structure within IGBT and the collector-emitter voltage on the gate control model is analyzed.Secondly,based on the analysis of the gate control model,it is proposed that the fitting times of the collector current should consider the duration of the current variation process and the calculation scenario.Polynomial fitting of 2 or less times can approximate the waveform of the collector current and is sufficient for power loss analysis,but is not suitable for analyses of current variation rate and induced voltage.Moreover,the differences in the parasitic inductance calculation using the turn-on and turn-off waveforms are compared.The applicable range of calculating the parasitic inductance of the test circuit in different processes and the calculation method of the parasitic inductance in FWD packaging are proposed.Finally,the coupling relationship between the gate voltage and the collector-emitter voltage during the transient process is analyzed,and a state monitoring method of esti-mating the collector-emitter voltage with the gate voltage is proposed and experimentally verified.
作者
李雨泽
张秀敏
袁文迁
宋鹏
季一润
焦超群
LI Yuze;ZHANG Xiumin;YUAN Wenqian;SONG Peng;JI Yirun;JIAO Chaoqun(School of Electrical Engineering,Beijing Jiaotong University,Beijing 100044,China;State Grid Jibei Electric Power Research Institute,Beijing 100045,China;State Grid Key Laboratory of Operation and Maintenance Technology of VSC-HVDC Transmis-sion System,Beijing 100045,China)
出处
《高电压技术》
EI
CAS
CSCD
2024年第3期1252-1263,共12页
High Voltage Engineering
基金
国家自然科学基金(52377001)
国家电网公司总部科技项目(5500-202114133A-0-0-00)。
关键词
栅极电压
集射极电压
电流上升过程
电流下降过程
寄生电感
耦合关系
gate voltage
collector-emitter voltage
current rising process
current dropping process
parasitic inductance
coupling relationships
