摘要
本研究分别用微量Zn^(2+)与Sn^(4+)取代Mg_(2)+与Ti^(4+),通过固相反应法制备了Zn-Sn共掺杂Mg_(2)TiO_(4)微波介电陶瓷,并采用阿基米德法、XRD、SEM、EDS及网络分析仪等手段,分析了材料的基本物性和介电特性。基本物性分析结果表明,烧结温度、Zn掺杂量x、Sn掺杂量y等因素对Mg_(2)TiO_(4)的晶体结构无明显影响,烧结致密性随烧结温度的升高呈先增大后减小的趋势,其中在1300℃下烧结所得的(Zn_(0.05)Mg_(0.95))2(Sn_(0.05)Ti_(0.95))O_(4),烧结致密性最佳,达到98%。微波介电特性分析结果表明,Zn-Sn共掺杂Mg_(2)TiO_(4)的介电常数εr与品质因数Q×f值,均随烧结温度的升高而呈先增大后减小的趋势,且其谐振频率温度系数τf具有较好的稳定性,其中在1300℃下烧结所得的(Zn_(0.05)Mg_(0.95))2(Sn_(0.05)Ti_(0.95))O4,εr≈15.55,Q×f≈319690GHz,此时τf≈-52.06×10^(-6)·℃^(-1)。与前人的研究结果比较后可知,本研究制备的(Zn_(0.05)Mg_(0.95))2(Sn_(0.05)Ti_(0.95))O_(4)不仅将烧结温度大幅下降至1300℃,还能将品质因子提升至319690GHz,使其微波介电性能得到有效改善。
Mg_(2)+and Ti^(4+)were replaced by small amounts of Zn^(2+)and Sn^(4+)respectively,and Zn-Sn codoped Mg_(2)TiO_(4)microwave dielectric ceramics were prepared by solid-state reaction method in this study,and then their basic physical properties and dielectric properties were analyzed by Archimedes method,XRD,SEM,EDS and network analyzer.The analysis of basic physical properties showed that the sintering temperature,Zn doping amount x,and Sn doping amount y had no significant effect on the crystal structure of Mg_(2)TiO_(4).The sintering compactness first increased and then decreased with the increase of sintering temperature.The compactness of(Zn_(0.05)Mg_(0.95))2(Sn_(0.05)Ti_(0.95))O_(4)sintering at 1300℃was the best and reached 98%.The analysis of microwave dielectric properties showed that the dielectric constantεr and quality factor Q×f of Zn-Sn codoped Mg_(2)TiO_(4)first increased and then decreased with the increase of sintering temperature,and its resonant frequency temperature coefficientτf had good stability.εr≈15.55 and Q×f≈319690GHz of(Zn_(0.05)Mg_(0.95))2(Sn_(0.05)Ti_(0.95))O_(4)sintering at 1300℃was maximum,and itsτf≈-52.06×10^(-6)/℃.Compared with previous research,it could be concluded that(Zn_(0.05)Mg_(0.95))2(Sn_(0.05)Ti_(0.95))O_(4)prepared in this study not only significantly reduced the sintering temperature to 1300℃,but also increased the quality factor to 319690GHz,effectively improved its microwave dielectric properties.
作者
何梦慈
王元凯
娄本浊
HE Mengci;WANG Yuankai;LOU Benzhuo(School of Physics and Telecommunication Engineering,Shaanxi University of Technology,Hanzhong 723001,China)
出处
《化工技术与开发》
CAS
2024年第5期1-5,72,共6页
Technology & Development of Chemical Industry
基金
陕西省教育厅专项科研计划项目(21JK0556)。
