摘要
逆变工况下,半桥子模块下部绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)(简称T_(2)管)损耗占比较大,减小其损耗有利于提升设备运行可靠性。同时,抑制电容电压纹波有利于减小电容需求及提高功率密度。然而,现有优化控制策略未关注损耗分布优化及电容电压纹波间的矛盾,难以兼顾设备运行可靠性及功率密度。为此,文中提出兼顾减小T_(2)管损耗及抑制电容电压纹波的综合优化方法。首先,通过分析电荷量对器件损耗及电容电压纹波的影响路径,阐述减小T_(2)管的通态损耗与抑制电容电压纹波间的内在矛盾。接着,通过引入罚函数,建立计及T_(2)管损耗及电容电压纹波的综合目标函数。然后,以主动旁路策略为例,通过分析二倍频环流与三次谐波电压注入对T_(2)管损耗和电容电压纹波的影响规律,提出基于二倍频环流及三次谐波电压注入的综合优化方法。最后,在MATLAB/Simulink及PLECS中搭建仿真模型进行验证。仿真结果表明:该综合优化方法兼顾了T_(2)管损耗与电容电压纹波优化,一定程度上增加了设备可靠性与设备的功率密度。
Under inverter operating conditions,significant loss is incurred by the insulated gate bipolar transistor(IGBT)(referred to as T_(2) tube) in the lower part of the half-bridge submodule.The reduction of loss is beneficial for the improvement of equipment operation reliability.At the same time,the suppression of capacitor ripple voltage has the advantage for reducing capacitor demand and enhancing power density.However,attention is not given by existing optimization control strategies to the contradiction between loss distribution optimization and capacitor ripple voltage,making it difficult to balance equipment operation reliability and power density.Therefore,a comprehensive optimization method that combines the reduction of T_(2) transistor losses and the suppression of capacitor voltage ripple is proposed in this article.Firstly,the inherent contradiction between reducing the on-state loss of the T_(2) transistor and suppressing capacitor voltage ripple is explained by analyzing the impact path of charge on device loss and capacitor ripple voltage.Then,by introducing a penalty function,a comprehensive objective function is established that takes into account T_(2) transistor losses and capacitor voltage ripple.Subsequently,using the active bypass strategy as an example,a comprehensive optimization method based on the injection of second harmonic current and third harmonic voltage is proposed by analyzing the impact of the second harmonic current and third harmonic voltage injection on T_(2) transistor loss and capacitor voltage ripple.Finally,a simulation model is built in MATLAB/Simulink and PLECS for verification.The simulation results suggest that the reliability and power density of the device increase by the comprehensive optimization method,considering both T_(2) transistor losses and capacitor voltage ripple.
作者
苏田田
路茂增
马新喜
赵艳雷
张厚升
SU Tiantian;LU Maozeng;MA Xinxi;ZHAO Yanlei;ZHANG Housheng(School of Electrical and Electronic Engineering,Shandong University of Technology,Zibo 255030,China)
出处
《电力工程技术》
北大核心
2024年第3期32-41,共10页
Electric Power Engineering Technology
基金
国家自然科学基金资助项目(62073200)
山东省自然科学基金资助项目(ZR2020QE215)。
