摘要
蝶形磁致伸缩膜由于磁汇聚,其中心区域的磁致伸缩应变增强,但是和矩形AT切石英晶片复合时,磁膜耦合至矩形晶片电极区的应变会向周围无磁膜区域扩散,降低应变对晶片厚度剪切振动的作用,降低磁场传感器灵敏度。提出AT切石英晶片和FeGa膜形状一样的蝶形谐振磁场传感器,蝶形晶片可以将蝶形磁膜增强的晶片应变汇聚至晶片电极区,以提高传感器灵敏度。仿真结果预测,在23.8~118.9 Oe的磁场范围内,蝶形结构的灵敏度为蝶形磁膜/矩形晶片结构的3.73倍。通过微机械加工,制作了蝶形器件,对实际器件测试的结果表明,在76.4~117 Oe的线性区间内,蝶形传感器的灵敏度可达-29.08 Hz/Oe。
Due to magnetic convergence,the magnetostrictive strain in the central region of a butterfly-shaped magnetostrictive film is enhanced.However,when the butterfly-shaped magnetostrictive films are combined with the rectangular AT-cut quartz wafer,the strain in the electrode region of the rectangular wafer spreads out to the surrounding non-magnetic film region and thus reduces the effect of the strain on the thickness-shear vibration of the wafer and consequently reduces the sensitivity of magnetic field sensor.In this paper,a butterfly-shaped resonant magnetic field sensor with the same shape of AT-cut quartz wafer as the FeGa films sandwiching the wafer is proposed.The butterfly-shaped sandwiched composite can concentrate the strain enhanced by the butterfly-shaped film into the electrode region of the wafer to improve the sensor sensitivity.The simulation results predict that the sensitivity of the butterfly-shaped structure is 3.73 times that of the butterfly-shaped magnetic film/rectangular wafer structure.By MEMS fabrication,we developed the butterfly-shaped sensor,and the characterization of the actual device shows that the sensitivity can reach-29.08 Hz/Oe in the linear range of 76.4~117 Oe.
作者
杨晓朋
文玉梅
陈冬雨
李平
Yang Xiaopeng;Wen Yumei;Chen Dongyu;Li Ping(School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)
出处
《仪器仪表学报》
EI
CAS
CSCD
北大核心
2024年第3期17-25,共9页
Chinese Journal of Scientific Instrument
基金
国家自然科学基金(62220106010)项目资助。
关键词
谐振磁场传感器
AT切石英
FeGa膜
蝶形结构
resonant magnetic field sensor
AT-cut quartz crystal
FeGa film
butterfly-shaped structure
