摘要
针对锗硅异质结双极晶体管(SiGe HBT)进行TCAD仿真建模,基于SiGe HBT器件模型搭建低噪放大器(LNA)电路,开展单粒子瞬态(SET)的混合仿真,研究SET脉冲随离子不同LET值、入射角度的变化规律.结果表明:随着入射离子LET值的增大,LNA端口的SET脉冲的幅值增大,振荡时间延长;随着离子入射角的增大,LNA端口的SET脉冲的幅值先增大后减小,振荡时间减小.使用反模(IM)共射共基结构(Cascode)降低LNA对单粒子效应的敏感度,验证了采用IM结构的LNA电路的相关射频性能.针对离子于共基极(CB)晶体管、共发射极(CE)晶体管两种位置入射进行SET实验.实验结果与本实验中的正向模式相比,IM Cascode结构的LNA电路的瞬态电流持续时间明显减少,并且峰值减小了66%及以上.
In this work,TCAD simulation modeling is carried out for silicon-germanium heterojunction bipolar transistor(SiGe HBT),and an X-band low noise amplifier(LNA)circuit is built based on the SiGe HBT device model to carry out the hybrid simulation of single-particle transient(SET).The rule of SET pulse varying with LET value and incident angle of ions is studied,and the results show that with the increase of incident LET value,the amplitude of SET pulse at the LNA port increases,and the oscillation time is prolonged;with the increase of incident angle of ions,the amplitude of SET pulse at the LNA port first increases and then decreases,and the oscillation time decreases.With the development of the characterization process,the cutoff frequency(f_(T))and the maximum oscillation frequency(f_(MAX))of SiGe HBT device with IM structure,are measured considering the use of inverse-mode(IM)common emitter and common-base structures(Cascode)to reduce the sensitivity of the LNAs to single-particle effects.This work calibrates the devices of the TCAD platform as well as the devices of the ADS platform,establishes F-F LNAs as well as I-F LNAs on the ADS,respectively,and verifies the relevant RF performances of the LNA circuits by using the IM-structured SiGe HBTs as the core devices.The SET experiments are performed on the Sentaurus TCAD platform for the F-F LNA circuit and I-F LNA circuit for ions incident on two positions:common base transistor and common emitter transistor,respectively.It is concluded that the LNA with IM structure still shows good RF performance compared with the standard LNA at 130 nm.The transient current duration of the LNA circuit with IM Cascode structure is significantly reduced,and the peak value is reduced by 66% or more,which significantly reduces the sensitivity of the SiGe LNA circuit to SET.
作者
黄馨雨
张晋新
王信
吕玲
郭红霞
冯娟
闫允一
王辉
戚钧翔
Huang Xin-Yu;Zhang Jin-Xin;Wang Xin;LüLing;Guo Hong-Xia;Feng Juan;Yan Yun-Yi;Wang Hui;Qi Jun-Xiang(School of Aerospace Science and Technology,Xidian University,Xi’an 710049,China;Xinjiang Technical Institute of Physics&Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2024年第12期288-299,共12页
Acta Physica Sinica
关键词
锗硅异质结双极晶体管
单粒子效应
反模
混合仿真
silicon-germanium heterojunction bipolar transistor
single particle effect
inverse mode
hybrid simulation
