摘要
Hafnium zirconium oxides(HZO),which exhibit ferroelectric properties,are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor(CMOS) compatibility.In addition to piezoelectricity,ferroelectricity,and flexoelectricity,this study reports the observation of ferroelasticity using piezoelectric force microscopy(PFM) and scanning transmission electron microscopy(STEM).The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field.Switching of the retentive domains is observed through repeated wake-up measurements.This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.
作者
关赵
王陶
郑赟喆
彭悦
魏鹿奇
张宇科
阿卜力孜·麦提图尔荪
黄家豪
童文旖
韩根全
陈斌斌
向平华
段纯刚
钟妮
Zhao Guan;Tao Wang;Yunzhe Zheng;Yue Peng;Luqi Wei;Yuke Zhang;Abliz Mattursun;Jiahao Huang;Wen-Yi Tong;Genquan Han;Binbin Chen;Ping-Hua Xiang;Chun-Gang Duan;Ni Zhong(Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China;School of Microelectronics,Xidian University,Xi'an 710071,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China)
基金
Project supported by the the National Key Research and Development Program of China (Grant No. 2022YFA1402902)
the National Natural Science Foundation of China (Grant Nos. 12074119, 12204171, 12134003, and 12374145)
the Chenguang Program Foundation of Shanghai Education Development Foundation and Shanghai Municipal Education Commission, ECNU (East China Normal University) Multifunctional Platform for Innovation (006)
the Fundamental Research Funds for the Central Universities。
