摘要
介绍了一种基于混合波导魔T的V频段宽带高效率功率合成放大器。采用混合波导魔T结构和超宽带扇形开路薄膜电阻,设计了一款覆盖整个V频段的新型小型化高隔离二路功分器,实测在50~75 GHz频率范围内,平均电路损耗0.2 dB,输入回波小于-20 dB,隔离和输出回波小于-14 dB。基于该电路结构,采用V频段宽带GaN功放芯片,研制了一种3.5 W功率模块,以该功率模块为基本单元,并采用16路高效率功率分配/合成网络,研制出一款V频段宽带高效率功率合成放大器。实测在50~75 GHz的V频段全频段范围内,连续波饱和输出功率大于47 dBm,小信号增益大于46 dB,合成效率全频带内大于82%,在全频段实现了高效率合成和大功率输出。该电路结构紧凑,工作频带宽,合成效率高且便于散热,具有很好的工程应用价值。
A V-band broadband high efficiency power-combining amplifier based on waveguide hybrid magic T is introduced.A novel miniaturized high isolation two-way power divider covering the entire V-band is designed using the waveguide hybrid magic T structure and an ultra-wideband fan-shaped open circuit thin film resistor.In 50~75 GHz,the measured average insertion loss is 0.2 dB,the input return loss is less than-20 dB,and the isolation and output return loss are less than-14 dB.Based on this circuit structure,a 3.5 W power module is developed using a V-band broadband GaN power amplifier chip.A V-band broadband high efficiency power-combining amplifier is developed using this power module as the basic unit and the 16-way high-efficiency power dividing/combining network.The test results show that in the full frequency range of the V-band,the continuous wave saturated output power is more than 47 dBm,the small signal gain is more than 46 dB,and the power-combining is more than 82%,high combining efficiency and large output power is achieved in the whole V-band.The circuit has a compact structure,wide operating frequency band,high power combining efficiency,and is easy to dissipate heat,making it highly valuable for engineering applications.
作者
胡顺勇
HU Shunyong(Southwest China Institute of Electronic Technology,Chengdu 610036,China)
出处
《电讯技术》
北大核心
2024年第7期1156-1162,共7页
Telecommunication Engineering
关键词
功率合成放大器
V频段
混合魔T结构
power-combining amplifier
V-band
hybrid magic T structure
