摘要
为提高片上存储的可靠性,设计了一种基于汉明码纠错的高可靠存储系统。该电路包括检错纠错(ECC)寄存器模块和ECC_CTRL模块。CPU可通过高级高性能总线(AHB)配置ECC寄存器以实现相应功能,SRAM和Flash的读写数据则通过ECC_CTRL模块进行校验码的生成和数据的检错纠错。仿真结果表明,该高可靠存储系统能够检测单bit和双bit错误,纠正单bit错误,提高数据存储的可靠性,同时可将发生错误的数据和地址锁存在寄存器中,以免用户访问发生错误的地址。
In order to enhance the reliability of on-chip storage,a high-reliability storage system based on Hamming code error correction is designed.This circuit is composed of an error detection and correction(ECC)register module and an ECC_CTRL module.The CPU can configure ECC registers through the advanced high-performance bus(AHB)to implement corresponding functions.The read and write data of SRAM and Flash is processed through the ECC_CTRL module for check code generation and data error detection and correction.Simulation results demonstrate that this high-reliability storage system can detect single-bit and double-bit errors,and correct single-bit errors,thereby improving the reliability of data storage.At the same time,this circuit can lock erroneous data and addresses into registers,preventing users from accessing erroneous addresses.
作者
史兴强
刘梦影
王芬芬
陆皆晟
陈红
SHI Xingqiang;LIU Mengying;WANG Fenfen;LU Jiesheng;CHEN Hong(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)
出处
《电子与封装》
2024年第7期57-62,共6页
Electronics & Packaging
关键词
汉明码
高可靠性
存储系统
检错纠错
Hamming code
high-reliability
storage system
error detection and correction
