摘要
与Si基金属-氧化物-半导体场效应晶体管(MOSFETs)的绝缘栅结构不同,p-GaN增强型高电子迁移率晶体管(HEMTs)的栅极结构为pn结,其在较大正向电压下处于导通状态,漏电导较大。传统栅电荷测试方法假设栅极注入电流全部存储为栅电荷,因此不适用于p-GaN HEMTs器件,否则会严重高估数值。鉴于此,基于栅电荷积累的基本过程,提出了利用动态电容法来减小漏电流影响来提取p-GaN E-HEMT的栅电荷参数。结果表明,该方法能够得到更理想的栅电荷米勒平台和特性曲线,结果更符合实际,具有重要的应用价值。
Unlike the insulated gate structure of the Si-based metal-oxide-semiconductor field-effect transistors(MOSFETs),the gate of p-GaN-enhanced high electron mobility transistors(HEMTs)is a p-n junction,which is highly conductive under a large forward bias condition.The traditional method for the gate charge assumes that all current is injected and stored as gate charge.Thus,it is not applicable to p-GaN HEMT devices because the parameter values would be significantly overestimated.In this study,based on the basic accumulation process of the gate charge,we propose a dynamic capacitance method to extract the gate charge parameters of p-GaN E-HEMTs,which can reduce the impact of the forward leakage current.The capacitance method produces an ideal Miller plateau and characteristic curve,indicating significant potential for practical application.
作者
刘震
潘效飞
龚平
王燕平
叶斯灿
卢澳
闫大为
LIU Zhen;PAN Xiaofei;GONG Ping;WANG Yanping;YE Sican;LU Ao;YAN Dawei(Engineering Research Center of IOT Technology Applications of Ministry of Education,Department of Electronic Engineering,Jiangnan University,Wuxi,Jiangsu 214122,P.R.China;Wuxi Xinjian Semiconductor Technology Co.,Ltd.,Wuxi,Jiangsu 214000,P.R.China;Wuxi China Resources Micro-assembly Technology Co.,Ltd.,Wuxi,Jiangsu 214000,P.R.China)
出处
《微电子学》
CAS
北大核心
2024年第2期282-286,共5页
Microelectronics
基金
江苏省研究生科研与实践创新计划资助项目(KYCX18_1855)。
