摘要
High carrier recombination loss at the metal and silicon contact regions is one of the dominant factors constraining the power conversion efficiency(PCE)of crystalline silicon(c-Si)solar cells.Metal compound-based carrier-selective contacts are being intensively developed to address this issue.In this work,we present a high-performance electron-selective SiO_(x)/MgO_(x)contact for c-Si solar cells.The SiO_(x)/MgO_(x)stack is prepared by thermally-grown SiO_(x)(∼0.7 nm)and thermally-evaporated MgO_(x)(~1.0 nm).The electron selectivity of SiO_(x)/MgO_(x)contact is investigated by measuring the surface passivation and the contact resistivity(ρ_(c))on the c-Si surface.The results demonstrate that optimized SiO_(x)/MgO_(x)contact displays a very lowρ_(c)(3.4 mΩcm^(2))and a good surface passivation on an n-type c-Si surface simultaneously.A high PCE of 21.1%is achieved on an n-type c-Si solar cell featuring a full-area SiO_(x)/MgO_(x)rear contact.
金属和硅接触区域的高载流子复合损失是限制晶硅太阳电池的光电转换效率的主要因素之一.基于金属化合物的载流子选择性接触正在被集中开发以解决这个问题.在本工作中,我们提出了一种用于晶硅太阳电池的高性能电子选择性钝化接触SiO_(x)/MgO_(x).SiO_(x)/MgO_(x)由热生长的SiO_(x)(~0.7nm)和热蒸发的MgO_(x)(~1.0 nm)制备.通过测量表面钝化性能和接触电阻率(ρ_(c))研究了SiO_(x)/MgO_(x)电子选择性钝化接触.结果表明,优化的SiO_(x)/MgO_(x)接触在n型晶硅表面上显示出非常低的ρ_(c)(3.4mΩcm^(2))和好的表面钝化.在具有全面积SiO_(x)/MgO_(x)背接触的n型c-Si太阳能电池上实现了21.1%的高光电转换效率.
基金
financially supported by the National Natural Science Foundation of China(62174114)
the National Key R&D Program of China(2022YFB4200203)
the Department of Science and Technology of Jiangsu Province(BE2022036,BE2022027,and BE2022023)
the Distinguished Professor Award of Jiangsu Province
the"Dual Carbon"Science and Technology Project of Suzhou(ST202219)。
