摘要
In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.
出处
《Chip》
EI
2024年第3期36-42,共7页
芯片（英文）
基金
supported by the GuangdongMajor Project of Basic and Applied Basic Research(2023B0303000012)
Guangdong Science Foundation for Distinguished Young Scholars(2022B1515020073)
Shenzhen Science and Technology Program(JCYJ20220818102809020).
