摘要
The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.
ＥｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｔＥｘｃｉｔａｔｉｏｎＭｅｃｈａｎｉｓｍｏｆＥｒｂｉｕｍ－ａｃｔｉｖａｔｅｄＺｉｎｃＳｕｌｆｉｄｅＳｅｍｉｃｏｎｄｕｃｔｏｒＴｈｉｎＦｉｌｍＤｅｖｉｃｅｓ￥ＬＩＵＺｈａｏｈｏｎｇ；ＷＡＮＧＹｕｊｉａｎｇ；ＣＨＥＮＺｈ...
