摘要
采用磁控溅射法,先在镀钼的钠钙玻璃衬底上共溅射Cu、Sn金属层后,然后在顶部溅射一层Zn S,制备出Cu_2ZnSnS_4(CZTS)薄膜的预制层。对预制层进行低温合金,然后以硫粉作为硫源在石英管中进行高温硫化,得到表面平整但晶粒较小的CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用所得到的CZTS薄膜制备了太阳电池,其开路电压:Voc=442 m V,短路电流密度:Jsc=5.08 m A/cm^2,光电转换效率达到0.62%。
The precursors of Cu_2ZnSnS_4(CZTS) thin films were prepared on Mo-coated soda lime glasses by sulfurization of magnetron sputtered(Cu + Sn) /ZnS layers.Prior to sulfurization,the precursors were soft annealed under lower temperature.CZTS thin films with smooth surface but fine grains were obtained by high temperature annealing under sulfur vapor atmosphere.The crystal structure,surface morphology and composition of the films were characterized by X-ray diffraction(XRD),scanning electron microscope(SEM) and energy dispersive spectrometry(EDS) respectively.Meanwhile the purity of CZTS thin film phases was identified by raman spectroscopy.The conversion efficiency of the fabricated CZTS film solar cell was 0.62%with an open-circuit voltage of 442 mV,a short-circuit current density of5.08 mA/cm^2.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2015年第S1期222-226,共5页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金(61167003)
国家自然科学基金(61176127)
