摘要
利用0.15μm GaAs PHEMT工艺,研制了一款集成功率放大器和低噪声放大器的毫米波多功能单片。发射支路功率放大器采用三级放大拓扑结构,在32~36GHz内,在6V工作电压下,线性增益23dB,增益平坦度优于±0.75dB,输入/输出驻波小于1.3,饱和输出功率30dBm,功率附加效率约30%。接收支路低噪声放大器采用三级放大拓扑结构,在5V、30mA工作电压下,在32~37GHz内,线性增益23.5dB,增益平坦度优于±1dB,噪声系数小于2.5dB,1dB压缩输出功率大于6dBm。该芯片面积为3.67mm×3.13mm。
A millimeter wave T/R multi-functional MMIC which consisted of a power amplifier and a low noise amplifier has been successfully fabricated by using 0.15μm GaAs pHEMT technology.The three-stage power amplifier in the transmitting branch demonstrated 23 dB small signal gain,±0.75 dB gain flatness and less than 1.3 VSWRin/VSWRout,a saturated output power of around 30 dBm and a PAEof around 30%from 32 GHz to 36 GHz at a drain bias of 6V,which was superior to the PAEof the similar products.The three-stage low noise amplifier in the receiving branch demonstrated 23.5dB small signal gain and ±1dB gain flatness,a maximum noise figure of 2.5dB and an output power of 6dBm at 1dB compression point from 32 GHz to 37 GHz at power supply of 5V/30 mA.All components were integrated on a GaAs substrate covering 3.67mm×3.13 mm area.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2015年第5期433-437,共5页
Research & Progress of SSE
