摘要
以0.13μm部分耗尽薄膜SOI器件为研究对象,简要分析了体接触器件和浮体器件基本特性,指出两类器件击穿特性的差异性,并重点讨论了栅长、栅端偏压和衬底偏压等对器件击穿特性的影响,阐明了击穿特性的失效机理,为器件优化和电路设计提供参考。
Based on the commercial 0.13μm partial-depleted thin film silicon-on-insulator MOSFETs,the basic electrical performance of body contact and floating body device was analyzed,and their difference in breakdown characteristic was found out.The influence of gate length,gate bias and substrate bias voltage on breakdown voltage was investigated,by which the breakdown mechanism was illuminated.The work can be as a reference for device optimization and circuit design.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2016年第6期489-493,共5页
Research & Progress of SSE
关键词
绝缘体上硅
击穿
栅诱导漏极泄漏电流
体接触
浮体效应
silicon-on-insulator(SOI)
breakdown
gate induced drain leakage(GIDL)
body contact(BC)
floating body(FB) effect
