摘要
测量了Bi_4Ti_3O_12(BTO)陶瓷及其A和B位掺杂的系列材料介电损耗.在温度损耗谱上观察到一损耗峰,通过氧处理和内耗等相关实验手段,证实该峰(P1峰)是与氧空位有关的弛豫峰.同时观察该峰随不同掺杂类型的变化,分析了BTO陶瓷B位掺杂对铁电性的影响.
The dielectric loss of the Bi4Ti3O12 ceramics as well as the effect of doping in A - site and B - site were investigated. A peak(Pl peak) which was confirmed to be relative with the intrinsic oxygen vacancy in the sample was observed in the temperature spectrum. We also studied the variation of the peak with the different types of dopents and analysed the effect of B - site doping on the ferroelectric properties of the ceramic sample.
出处
《哈尔滨理工大学学报》
CAS
2002年第6期22-23,26,共3页
Journal of Harbin University of Science and Technology
基金
国家自然科学基金(19904005
90207027)
