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蝶形天线增强的InP基室温HEMT太赫兹探测器研究 被引量：2

Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature
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摘要 采用分子束外延技术制备了InP基HEMT样片,室温下样片迁移率达10 289 cm2/(V·s)。通过光刻、腐蚀、磁控溅射、点焊等工艺技术制备出了蝶形天线耦合的太赫兹探测器件。器件采用的蝶形天线经HFSS软件仿真优化后,天线S11参数为-40 d B,电压驻波比(VSWR)为1.15,增益可达6 dB,并与二维电子气沟道实现阻抗匹配。在VDI公司0.3 THz肖特基二极管太赫兹源辐照下进行器件测试,测试结果表明,室温下器件噪声等效功率(NEP)为40 nW/Hz1/2,探测响应度46 V/W,器件响应时间优于330μs。 InP-based HEMT samples were prepared by molecular beam epitaxy(MBE).The sample mobility at room temperature reached 10 289 cm2/(V·s).The terahertz detector coupled with a bow-tie antenna was fabricated by photolithography,etching,magnetron sputtering,spot welding.The bow-tie antenna used in the device was optimized by simulation with HFSS,so that the optimized antenna parameter of S11 was-40 dB,the voltage standing wave ratio(VSWR)was 1.15,gain was 6 d B and impedance matching with the two-dimensional electronic gas(2DEG)channel.The device was measured by VDI’s 0.3 THz Schottky diode terahertz source.The measurement results show that the device noise equivalent power(NEP)is 4 nW/Hz1/2 at room temperature,and the detection response rate is 46 V/W,the device response time is better than 330μs.
作者 李金伦 崔少辉(指导) 张静 张振伟 张博文 倪海桥 牛智川 Li Jinlun;Cui Shaohui;Zhang Jing;Zhang Zhenwei;Zhang Bowen;Ni Haiqiao;Niu Zhichuan(Department of Missile Engineering,Shijiazhuang Campus,Army Engineering University,PLA,Shijiazhuang050003,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing100083,China;The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi′an710071,China;Key Laboratory of THz Optoelectronics,Ministry of Education,Department of Physics,Capital Normal University,Beijing100048,China;Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing100049,China)
机构地区 中国人民解放军陆军工程大学石家庄校区导弹工程系 中国科学院半导体研究所超晶格国家重点实验室 西安电子科技大学宽带隙半导体技术国家重点学科实验室 首都师范大学物理系太赫兹光电子学教育部重点实验室 中国科学院半导体研究所半导体集成技术工程研究中心 中国科学院大学材料与光电研究中心
出处 《红外与激光工程》 EI CSCD 北大核心 2019年第9期132-138,共7页 Infrared and Laser Engineering
基金 国家自然科学基金(61505196) 国家重点研发计划(2018YFA0306101) 中国科学院科研仪器设备研制项目(YJKYYQ20170032)
关键词 太赫兹探测器 高电子迁移率场效应晶体管 磷化铟 蝶形天线 分子束外延 terahertz detector HEMT InP bow-tie antenna excellent beam quality
分类号 O441 [理学—电磁学]
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红外与激光工程
2019年 第9期

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