摘要
在极紫外光刻技术中 ,光学系统对多层膜光学元件表面面形精度有严格的要求 ,并且多层膜光学元件需要较高的反射率。由于多层膜中存在的内应力将改变光学元件的表面面形 ,因此在不减少反射率的前提下 ,一定要减少或补偿多层膜内的残余应力。论述了Mo/Si多层膜应力产生的原因和几种减少与补偿应力的技术 ,介绍应力的几种测量方法。
The stringent surface figure requirements for the multilayer-c oated elements in an extreme ultraviolet (EUV) projection lithography system mak es it desirable to minimize the deformation resulting from multiplayer film stress es. However, the stress must be reduced or compensated without decreasing EUV refl ectivity because the reflectivity has a strong impact on the throughput of an EUV lithog raphy tool. Several stress reduction and compensation techniques applicable to Mo/Si multilayer coatings, and several stress measurem ent methods are discussed in detail.
出处
《光学精密工程》
EI
CAS
CSCD
2003年第1期62-67,共6页
Optics and Precision Engineering
基金
国家自然科学基金重点资助项目 (No .6 99380 2 0 )
86 3_80 4高科技项目
中国科学院创新基金资助项目
关键词
极紫外光刻
多层膜
残余应力
EUVL
multilayer-coatings
residual stress.
