摘要
用磁控溅射法在Pt/Ti/SiO2 /Si衬底上制备了PbZr0 .52 Ti0 .4 8O3(PZT)薄膜 .XRD结果表明经过退火后的PZT薄膜呈现多晶结构 .通过红外椭圆偏振光谱仪测量了λ为 2 .5～ 12 .6 μm范围内PZT薄膜的椭偏光谱 ,采用经典色散模型拟合获得PZT薄膜的红外光学常数 ,同时拟合得到未经处理的PZT薄膜和退火后PZT薄膜的厚度分别为 45 4.2nm和 45 0 .3nm .最后通过拟合计算得到结晶PZT薄膜的静态电荷值为 |q|=1.76 9± 0 .0 2 4.这说明在磁控溅射法制备的PZT薄膜中 ,电荷的转移是不完全的 .
PbZr0.52Ti0.48O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si substrates by RF-magnetron sputtering method. X-ray diffraction analysis shows that the PZT thin films annealed are polycrystalline. Ellipsometric spectra of PZT thin films were measured by using infrared spectrometric ellipsometry in the wavelength range of 2.5 similar to 12.6mum. The classical dispersion relation is used in the fitting for the PZT thin films, and the optical constants and thickness of the thin films were obtained. The thicknesses for the as-deposited PZT and annealed PZT thin films are 454.2nm and 450.3nm, respectively. The effective static charge obtained is \q\ = 1.769 +/- 0.024, which reveals that the charge transfer is not complete in the PZT thin films.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第1期59-62,共4页
Journal of Infrared and Millimeter Waves
基金
国家重点基础研究专项经费 (批准号G0 0 1CB30 95 )资助项目~~
