摘要
Recently, two-dimensional (2D) layered semiconducting materials have been considered as promising channel materials to construct aggressively-scaled transistors owing to their excellent electrostatics and remained high carrier mobility even at atomic thickness (1,2)Among all of the emerging 2D semiconductors.
基金
supported by the National Key Research & Development Program (2016YFA0201901)
the National Natural Science Foundation of China (61621061, 61427901, 61274015 and 61888102)
