摘要
用加静高压的方法改变光学能隙来实现共振条件。在以(CdTe)_2(ZnTe)_4短周期超晶格为阱层,(ZnTe)_(4)为垒层的多量子阱结构中观察到高达四阶的类 ZnTe 纵光学声子模的多声子共振拉曼散射。通过对拉曼位移随压力变化的分析,发现在与(CdTe)_2(ZnTe)_4短周期超晶格共振时测得的类ZnTe 纵光学声子模的频率比与 ZnTe 势垒层共振时测得的 ZnTe 纵光学声子模的频率低4cm^(-1)。并将它归结为在短周期超品格中纵光学声子模的限制效应。在与短周期超品格严格的2LO 声子出射共振条件下观察到了类 CdTe 的2LO 声子的共振拉曼峰。
The multiphonon resonant Raman scattering from(CdTe)_2(ZnTe)_4 -ZnTe multiple quantum well structure has been carried out by using the pressure tuning of the optical gap of samples out by using the pressure consists of a(CdTe)_2(ZnTe)_4×8 short period superlattice as the well and a thick ZnTe layer as the barrier.Up to forthorder multiphonon scattering of the ZnTe-like LO phonon modes was observed.It was found that the Raman shift of the ZnTe-like LO phonon modes in resonance with(CdTe)_2(ZnTe)_4 short period superlattices is 4 cm^(-1) lower than that in resonance with ZnTe barrier due to the confined effect of LO phonons in the short period superlattices, The resonant 2LO peak of the CdTe-like modes was aslo observed at the strict out-going resonant condition with the short period superlattices.
出处
《光散射学报》
1992年第1期11-21,共11页
The Journal of Light Scattering
基金
国家自然科学基金
关键词
共振散射
喇曼效应
半导体材料
Resonant Raman scattering
Quantum well structure
