摘要
为减轻传统SOI(silicon on insulator)材料的自加热效应 ,首次利用智能剥离技术 (smart cutprocess)成功制备了SOAN(silicon on aluminum nitride)结构 ,即以氮化铝 (AlN)薄膜为埋层的SOI结构 .采用离子束增强技术(IBED)在 10 .16cm(4in)硅片上合成了AIN薄膜 .剖面透射电镜照片证实了此SOAN结构 .高分辨的X射线衍射技术被用来研究此结构的剩余晶格应力 ,实验结果表明刚得到的SOAN结构在 110 0℃下退火
Self heating effects in silicon on insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power consumption is expected.AlN becomes a promising alternative to SiO 2 layer in traditional SOI materials.For the first time,a novel silicon on aluminum nitride (SOAN) structure has been fabricated by the smart cut process to alleviate the self heating effects.The AlN films were synthesized on 10.16 cm(4 in) Si(100) substrate by ion beam enhanced deposition (IBED) technique,followed by the smart cut process.Cross sectional transmission electron microscope (XTEM) micrograph confirms the formation of the SOAN structure.high resolution X ray diffraction (HRXRD) was employed to study the residual strain in the formed SOAN structure indicating that the residual lattice strain in the top silicon layer varied from tensile to little compressive after as received SOI samples annealed at 1 100 ℃ for an hour.
出处
《同济大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2003年第3期361-364,共4页
Journal of Tongji University:Natural Science
基金
国家自然科学基金资助项目 ( 699760 3 4
90 10 10 12 )
国家重点基础研究专项经费资助项目 (G2 0 0 0 0 3 65 )
