摘要
采用射频磁控共溅射技术成功制备GaAs半导体纳米颗粒镶嵌薄膜,GaAs在薄膜中所占分子百分比达 1 9.0 %.光电子能谱分析表明随着基片温度升高,薄膜中元素Ga、As的被氧化程度有所增强,但元素Ga、As仍主要以化合物半导体GaAs的形式,元素Si、O主要以SiO2 分子的形式存在于复合薄膜中.
Compound films embedded with GaAs semiconductor nano-particles were successfully prepared by means of radio frequency (RF) magnetron co-sputtering technology. The Molecular percentage of GaAs is about 19.0% in the compound films. X-ray photoelectron spectroscopy (XPS) study indicated that the oxidative degree of the elements of Ga and As increases with higher substrate temperature. However, the elements of Ga and As mainly exist as compound semiconductor molecules of GaAs and the elements of Si and O as SiO 2 in the films.
出处
《淮阴师范学院学报（自然科学版）》
CAS
2003年第1期24-27,共4页
Journal of Huaiyin Teachers College;Natural Science Edition
基金
国家自然科学基金资助项目(10 0 740 6 8)
国家重点基础研究基金资助项目(G19980 6 14 0 4).
关键词
半导体纳米颗粒
磁控共溅射
光电子能谱
复合薄膜
semiconductor nano-particles
magnetron co-sputtering
X-ray photoelectron spectroscopy
compound films
