摘要
本文通过建立发射区两区模型,对多晶硅膜改善薄发射区晶闸管开通特性的机理进行了分析,结果表明:基区注入的少子在多晶硅区运动受障碍导致等效薄发射极晶体管的电流增益提高;多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.管芯测试结果亦表明,由于多晶硅膜的作用,薄发射区晶闸管的开通特性并未因发射区很薄而受影响.
The mechanism for improving the turn-on properties of thyristors with a thin emitter is analyzed by two-region models developed for the emitter region. It is shown that an increment of current gain of equivalent thin emitter transistors results because the transport of minority carriers injected by the base is retarded in the polysilicon emitter region. The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment. Measured results for the tablets show that because of the role played by the polysilicon films, the turn-on properties of the thin emitter thyristors are not affected by the very thin emitter region.
出处
《华中理工大学学报》
CSCD
北大核心
1992年第4期7-14,共8页
Journal of Huazhong University of Science and Technology
基金
湖北省自然科学基金资助项目
关键词
晶闸管
多晶硅膜
开通特性
thyristors
polysilicon films
turn-on properties
current gain
