摘要
The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.
The theoretical spectral response formula of the N^+ ― N ― I ― P^+ siliconphotodetector with high/low emission junction is given. At the same time; considering the processrequirements, the optimum structure parameters of silicon photodetector are obtained by numericalcalculation and simulation. Under the condition of these optimum structure parameters, theresponsivity of the silicon photodetector will be 0. 48 A/W at 650 nm.
