摘要
多孔硅被认为是RF应用领域中较有潜力的衬底材料。文章利用多孔硅作衬底,制备了微型微波共平面波导,采用多线方法计算出该波导在多孔硅上的插入损耗和有效介电常数;提出了通过多孔硅的相对介电常数来确定多孔度的方法。实验测试结果表明,在20μm多孔硅上的波导,其插入损耗在1～30GHz范围内为1～40dB/cm;而在70μm多孔硅上制备的波导,其插入损耗在整个测试频段内不超过7dB/cm。通过有效介电常数的计算,推算出实验制备的70μm多孔硅材料的多孔度约为65%。
Miniature micromave coplanar waveguides were fabricated on porous silicon substrate The insert loss and the effective dielectric constant of these waveguides were calculated with multiline method And a method to determine the porosity through the relative dielectric constant of the porous silicon is presented in the paper It has been found that the insert loss of the waveguide on 20 μm porous silicon was between 1 and 40 dB/cm from 1 GHz to 30 GHz, while, for the waveguide on 70 μm porous silicon, the insert loss was below 7 dB/cm in the full measured frequency range And the porosity of 70 μm porous silicon in our experiment was about 65%, which was deduced from the relative dielectric constant of porous silicon
出处
《微电子学》
CAS
CSCD
北大核心
2003年第3期203-206,共4页
Microelectronics
基金
国家973项目<集成微光机电系统研究>(G19990303105)
国家自然科学基金项目(69876012)
国家杰出青年基金项目(69975409)
上海市应用材料研究与发展基金项目(0103)
上海市重点学科项目(012261028)
上海市重点学科项目(2001年)资助。
关键词
多孔硅
共平面波导
传输特性
阳极氧化
插入损耗
有效介电常数
Porous silicon (PS)
Anodization
Coplanar waveguide (CPW)
Insert loss
Effective dielectric constant
