摘要
介绍了吸杂的分类与效果以及内吸杂工艺,并综述了金属在硅中的性质,主要阐明了氧在内吸杂中的作用,简述了氮对吸杂的影响,井讨论了内吸杂的物理机理。最后探讨了今后吸杂的发展方向。
Metal atoms in silicon wafers have a great effect on the electrical properties of semiconductor devices. To improve the performance of semiconductor devices,gettering has always been an important processing step in semiconductor industry. In this paper,the commonly used gettering techniques and their principles are summarized. Especially, the effect of oxygen and nitrogen on intrinsic gettering is extensively examined and the gettering mechanism is discussed. The effects of metal impurities on the electrical properties are also described.
出处
《材料导报》
EI
CAS
CSCD
2003年第5期73-75,81,共4页
Materials Reports
