摘要
利用离面双弯曲过滤阴极真空电弧沉积系统,在Φ200mm单晶硅片上制备四面体非晶碳薄膜。利用Dectek3型表面轮廓仪检验膜厚均匀性(小于5%),并利用扫描电子显微镜(SEM)、原子力显微镜(AFM)、激光拉曼光谱(Raman)、X射线光电子谱(XPS)以及纳米压痕(Nano-Indenter)仪器测试薄膜的性能和结构。结果表明:试验制备的薄膜是四面体非晶碳薄膜,其中sp3键含量高达80%以上,薄膜表面纯净,几乎没有大颗粒的污染,表面粗糙度(Rq)小于0.3nm(取样面积1μm2),薄膜硬度可达50GPa,杨氏弹性模量高于550GPa。
Tetrahedral amorphous carbon films were deposited on the 200mm silicon wafer by means of off-plane-double-bend filtered cathodic vacuum arc system. The uniformity of film thickness, which is less than 5%, is verified by Dectek3 surface profiler. The properties and structure were investigated by SEM, AFM, Raman spectroscopy, XPS and Nano-Indenter. It shows that the films are tetrahedral amorphous carbon films. The content of sp3 in the films is beyond 80%. The surface of the films is clear and is nearly not polluted by macroparticles. The value of Rq is less than 0.3 nm in the given area of 1μm2. The hardness of the films is close to 50 GPa and the Young's modulus is more than 550 GPa.
出处
《功能材料与器件学报》
CAS
CSCD
2003年第2期118-122,共5页
Journal of Functional Materials and Devices
基金
"十五"国家重点研究计划资助(No:0241312146)
关键词
四面体非晶碳薄膜
过滤阴极真空电弧
拉曼光谱
X射线光电子谱
纳米压入仪
制备
filtered cathodic vacuum arc (FCVA)
tetrahedral amorphous carbon (Ta-C)
Raman spectroscopy
x-ray photoelectron spectroscopy (XPS)
nano-indenter
