摘要
通过射频溅射的方法在单晶硅衬底上沉积了 β SiC薄膜 ,用HF酸 (40 % )和C2 H5OH(99% )的混合溶液对 β SiC薄膜进行了电化学腐蚀处理 ,形成了多孔 β SiC(PSC)薄膜 .利用荧光分光光度计研究了样品的光致发光 (PL)特性 ,用原子力显微镜 (AFM)和扫描电子显微镜 (SEM )观察了样品腐蚀前后的表面形貌 .结果表明 :多孔 β SiC薄膜具有较强的蓝光发射特性 ;通过改变腐蚀时间 ,可以改变蓝光发射的强度 ,也可以观察到蓝光 红光同时发射的现象 ;降低HF酸的浓度 ,蓝光发射峰明显变弱 ,并对多孔 β SiC薄膜的发光机理及其微观结构进行了讨论 .
SiC films are prepared on silicon substrates by radio-frequency sputtering method.Porous β-SiC (PSC) films are fabricated using the β-SiC films by electrochemical anodization in the HF (40%)-ethanolic (99%) solution.Fluorescence photospectrometer,atomic force microscope (AFM) and scanning electron microscope (SEM) are employed to characterize the samples' photoluminescence (PL) and surface morphology.Intense blue luminescence is observed at room temperature.The intensity of blue luminescence varies with the change of etching time,and emission of red is also observed.The blue luminescence obviously decreases when decreasing the HF concentration in the electrolyte.The luminescence mechanism and structure of the porous β-SiC films are also discussed.
基金
国家自然科学基金资助项目 (批准号 :6 0 176 0 0 2 )~~
