摘要
铁氧体薄膜器件在微波和毫米波集成中有着广泛地应用。本文首次将T.Itoh提出的谱域导抗法的分析推广到铁氧体基片微带线结构。通过对麦克斯韦方程的坐标旋转和傅里叶变换,导出铁氧体介质的波导纳,利用边界条件,忽略TE和TM波的耦合后,用一网络等效表示铁氧体基片微带线,从而借助于谱域导抗法进行特性分析。本文对铁氧体基片微带线的色散特性进行了数值计算,并讨论了微带线的各种参数对色散特性的影响。
Ferrite film devices have been widely used in micro- and millimeter-wave integrated-circuit techniques. The microstrip structures with ferrite substrate are analyzed for the first times by T. Itoh' s spectral-domain immittance approach. The wave admittances of TE and TM modes in the ferrite medium are deduced,through the Fourier transform and a coordinate rotation of Maxwell' s Equations. If the boundary conditions are used and the coupling between TE and TM modes is neglected,the microstrip line with ferrite substrate can be e-qually represented by a network. Therefore,its characteristics are analyzed by means of a spectral-domain immittance approach. In this paper the dispersion characteristics of the mi crostrip line with ferrite substrate are numerically calculated and the effects of the struc tural parameters of the microstrip on dispersion characteristics are also discussed.
关键词
铁氧体
屏蔽
色散
谱域导抗法
ferrite, shielding, dispersion, spectral-domain immittance approach