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用氧化多孔硅作牺牲层制备悬空微结构 被引量：1

Fabrication of free standing structure using oxidized porous silicon as sacrificial layers
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摘要 提出一种新的牺牲层工艺。先将阳极氧化生成的多孔硅在300℃的氮气氛下进行退火以稳定其多孔结构,然后将其在700℃下氧化成为具有多孔结构的二氧化硅。用氧化的多孔硅材料作为牺牲层材料,既可以保留多孔硅牺牲层材料释放迅速的优点,又克服了多孔硅在释放时的局限性。实验运用氧化的多孔硅材料作牺牲层成功制备了悬空振膜和悬臂梁结构。 A new MEMS technology using the oxided porous silicon as sacrificial layers was presented. The porous silicon formed by electrochemical etching in HF should be stabilized porous structure by annealing at 300℃ in nitrogen atmosphere, and then oxided to SiO2 with porous structure at 700℃ .The oxided porous silicon can be etched in HF quickly to avoid the problem of etching porous silicon. The free standing membrane and cantilever are obtained by using this technology.
作者 宁瑾 刘忠立 刘焕章 葛永才
机构地区 中国科学院半导体研究所微电子中心传感技术国家重点实验室
出处 《功能材料与器件学报》 CAS CSCD 2003年第3期319-322,共4页 Journal of Functional Materials and Devices
关键词 氧化多孔硅 牺牲层 制备 悬空微结构 阳极氧化 硅微机械加工技术 微型传感器 oxidized porous silicon sacrificial layers free standing structure electrochemical etching
分类号 TP212 [自动化与计算机技术—检测技术与自动化装置]
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参考文献7

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同被引文献10

  • 1Hart C H, Kim E S. Micromachined piezoelectric ultrasonic trans-ducers on dome-shaped-diaphragm in silicon substrate [ C ]//Pro- ceedings of 1999 IEEE, Uhrasonics Symposium,1999 : 1167 -1172.
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  • 4Taniguchi S,Yokoyama T, Iwaki M, et al. An air-gap type FBAR filter fabricated using a thin sacrificed layer on a fla! snbs- trate[ C]//2007 IEEE Ultrasonics Symposium,2007:600 -603.
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  • 6Feng G H,Sharp C C, Zhou Q F, et al. Fabrication of ME MS ZnO dome-shaped-diaphragm transducers fi)r high frequency uhrasoni(. imaging[ C]//2004 IEEE International Ultrasonics, Fcrroelcc- trics,and Frequency Control Joint 50th Anniversary Confcrcncc, 2004 : 1950 -1953.
  • 7Dubois M A. Thin film bulk acoustic wave resonators: A technolo- gy overview [ C ]// MEMSWAVE 03, Toulouse, France ,2003.
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  • 10杨增涛,冷俊林,梅勇,黄磊,杨正兵,李燕,刘晓莉.硅各向异性浅槽腐蚀实验研究[J].压电与声光,2011,33(4):513-516. 被引量：4

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功能材料与器件学报
2003年 第3期

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