摘要
通过对DX0231型BSIT栅源低击穿问题的分析,讨论了设计、材料、环境、设备等因素对表面栅BSIT栅源击穿的影响,指出了提高栅源击穿的努力方向。
By analyzing the reason of decreasing the Gate-Source breakdown voltage of planargate BSIT(Bipolar-mode Static Induction Transistor),the factor to effect the performance of Gate-Source junction is enumerated, such as design, material, environment, operation, equipment, etc.The way to improve the Gate-Source breakdown voltage is indicated.
出处
《半导体技术》
CAS
CSCD
北大核心
2003年第10期78-81,共4页
Semiconductor Technology
