摘要
用直流反应磁控溅射法在n Si(111)和玻璃衬底上生长高度择优取向的Zn1-xCdxO合金晶体薄膜 ,最佳生长温度为 45 0℃ (x=0 2 ) .当x≤ 0 6时 ,Zn1-xCdxO薄膜具有纯ZnO的六角结构 ,x =0 8时 ,薄膜是由ZnO六角结构晶体和CdO立方结构晶体组成的混合物 .透射光谱测试表明 ,通过改变合金薄膜中Cd的含量 ,可以调节Zn1-x CdxO薄膜的禁带宽度 .
Highly oriented Zn 1-xCd xO films on n-Si(111) and glass substrates are obtained by DC reactive magnetron sputtering technique.For x=0.2,the optimal growth temperature is 450℃.For x≤0.6,the Zn 1-xCd xO films exhibit the crystal structure,which is similar to the pure ZnO.And a mixing of ZnO (hexagonal) and CdO (cubic) phases is for x=0.8.Transmittance spectrum measurements show that the optical band-edge of Zn 1-xCd xO films can be tuned by varying the Cd contents x.
基金
国家重点基础研究专项经费 (No .G2 0 0 0 0 6 830 6 )
国家自然科学基金 (批准号 :90 2 0 10 38)资助项目~~
