摘要
针对目前大功率980nm量子阱半导体激光器(LDs)为降低阈值电流而要求激射条宽窄、腐蚀深度深而造成的P I曲线扭折、侧向模式不稳定问题采用有效折射率近似方法进行模拟分析,并得到了实验上的证实。通过采用不对称波导及双量子阱结构,制备了低阈值(19mA)模式稳定的InGaAs/GaAs/Al GaAsLDs,其斜率效率0.6W/A(8μm×500μm,未镀膜器件),在输出功率达到100mW时保持横模、侧模的稳定。
The origin that influenced the stabilization of lateral pattern mode in low current high power quantum wells(QWs) laser diodes(LDs) was theoretically and experimentally analyzed.The laser structure was simulated with effective refractive index approximation mode by computer,and double QWs active region and asymmetric cladding layer structure lasers were designed and fabricated.The threshold current is 19 mA,and the slope efficiency reaches 0.6 W/A (8μm×500 μm,uncoating),and this diode could retain steady single lateral mode up to 100 mW output power.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2003年第10期1011-1014,共4页
Journal of Optoelectronics·Laser
基金
国家"973"基金资助项目(G20000683-02)
国家"863"计划资助项目(2002AA312070)
国家自然科学基金(69889601)
北京市自然科学基金资助项目(4032007
4021001)
北京市科委科技攻关资助项目(99270603)
