摘要
用电子束蒸镀方法在(100)单晶Si衬底上,生长Zn0.85Co0.15O薄膜,并研究了衬底温度对薄膜质量的影响,结果表明当衬底温度为400℃时,外延膜取向性最好,且其(002)衍射峰半高宽最窄(为0.4834°)。
Zn0.85Co0.15O Films were grown on Si(100) substrates by reactive electron beam evaporation. Its microstructures were characterized with X-ray diffraction (XRD) .We found that substrate temperature strongly affects the film quality and al a substrate temperature of 400℃highly c-axis oriented grains dominate in the film, with the narrowest(002) X-ray diffraction peak width of (0.4834°).
出处
《真空科学与技术》
CSCD
北大核心
2003年第5期353-355,共3页
Vacuum Science and Technology
基金
安徽省自然科学基金(No.00047208)
